1 february 1998 hs-op470arh radiation hardened, very low noise quad operational ampli?r features qml quali?d per mil-prf-38535 requirements radiation environment - total dose . . . . . . . . . . . . . . . . . . . . . . 1 x 10 5 rad(si) low noise - at 1khz . . . . . . . . . . . . . . . . . . . . . . . . 4.3nv/ hz (typ) - at 1khz . . . . . . . . . . . . . . . . . . . . . . . .0.6pa/ hz (typ) low offset voltage. . . . . . . . . . . . . . . . . . . 2.1mv (max) high slew rate . . . . . . . . . . . . . . . . . . . . . 1.7v/ s (min) gain bandwidth product . . . . . . . . . . . . . 8.0mhz (typ) applications high q, active filters voltage regulators integrators signal generators voltage references space environments description the hs-op470arh is a radiation hardened, monolithic quad operational ampli?r that provides highly reliable performance in harsh radiation environments. its excellent noise characteris- tics coupled with an unique array of dynamic speci?ations make this ampli?r well-suited for a variety of satellite system applications. dielectrically isolated, bipolar processing makes this device immune to single event latch-up. the hs-op470arh shows almost no change in offset voltage after exposure to 100k rad(si) gamma radiation, with only a minor increase in current. complementing these speci?ations is a post radiation open loop gain in excess of 40kv/v. this quad operational ampli?r is available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational ampli?rs. speci?ations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). smd numbers must be used when ordering. detailed electrical speci?ations for this are contained in smd 5962-98533. a ?ot-link?is provided on our homepage with instructions for downloading. http://www.intersil.com/data/sm/index.htm ordering information pinout hs-op470arh (flatpack) top view smd part number intersil part number temp. range ( o c) package case outline 5962r9853301vxc hs9-op470arh-q -55 to 125 14 ld flatpack cdfp3-f14 n/a hs9-op470arh/sample 25 14 ld flatpack cdfp3-f14 v+ out 1 -in1 +in1 +in2 -in2 out 2 v- out 3 out 4 -in3 +in3 +in4 -in4 14 13 12 11 10 9 8 2 3 4 5 6 7 1 file number 4471 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright ?intersil corporation 1999
2 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?ations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com sales of?e headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil (taiwan) ltd. taiwan limited 7f-6, no. 101 fu hsing north road taipei, taiwan republic of china tel: (886) 2 2716 9310 fax: (886) 2 2715 3029 metallization mask layout die dimensions: 95 mils x 99 mils x 19 mils 1 mil (2420 m x 2530 m x 483 m 25.4 m) metallization: type: al, 1% cu thickness: 16k ? 2k ? substrate potential (powered up): unbiased backside finish: silicon passivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? worst case current density: <2.0 x 10 5 a/cm 2 transistor count: 175 process: bipolar dielectric isolation +in2 v+ +in1 -in1 out1 out4 -in4 -in3 out3 out2 -in2 +in4 v- +in3 hs-op470arh
hs-op470arh printer friendly version rad-hard, very low noise quad operational amplifier datasheets, related docs & simulations description key features parametric data related devices ordering information part no. design-in status temp. package msl smd price us $ hs0-op470arh-q active mil die (military visual) n/a - contact us hs9-op470arh-q active - 14 ld flatpack n/a 5962r9853301vxc contact us 5962r9853301v9a coming soon mil 14 ld other - the price listed is the manufacturer's suggested retail price for quantities between 100 and 999 units. however, prices in today's market are fluid and may change without notice. msl = moisture sensitivity level - per ipc/jedec j-std-020 smd = standard microcircuit drawing description the hs-op470arh is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. its excellent noise characteristics coupled with an unique array of dynamic specifications make this amplifier well-suited for a variety of satellite system applications. dielectrically isolated, bipolar processing makes this device immune to single event latch-up. the hs-op470arh shows almost no change in offset voltage after exposure to 100k rad(si) gamma radiation, with only a minor increase in current. complementing these specifications is a post radiation open loop gain in excess of 40kv/v. this quad operational amplifier is available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers. specifications for rad hard qml devices are controlled by the defense supply center in columbus (dscc). smd numbers must be used when ordering. detailed electrical specifications for this are contained in smd 5962-98533. a ?hot-link? is provided on our homepage with instructions for downloading. http://www.intersil.com/data/sm/index.htm key f eatures qml qualified per mil-prf-38535 requirements radiation environment total dose 1 x 10 5 rad(si) low noise at 1khz 4.3nv/ hz (typ) at 1khz 0.6pa/ hz (typ) low offset voltage 2.1mv (max) high slew rate 1.7v/s (min) gain bandwidth product 8.0mhz (typ) related documentation
datasheet(s): radiation hardened, very low noise quad operational amplifier military smd(s): radiation hardened, very low noise quad operational amplifier technical homepage: military/space ics parametric data rh level 100 applications high q, active filters voltage regulators integrators signal generators voltage references related devices parametric table hs-5104arh rad-hard low noise quad operational amplifier isl7124srh single-event hardened, single supply, quad operational amplifier about us | careers | contact us | investors | legal | privacy | site map | subscribe | intranet ?2007. all rights reserved.
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